The role of the bulk spin-dependent scattering on the origin of the enhanced magnetoresistance in magnetic multilayers

被引：11
|
作者：
Prados, C [1 ]
Dimitrov, DV [1 ]
Hadjipanayis, GC [1 ]
机构：
[1] Univ Delaware, Dept Phys & Astron, Newark, DE 19716 USA
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1999年 / 192卷 / 01期
基金：
美国国家科学基金会;
关键词：
giant magnetoresistance; thin films; spin-dependent scattering; spin valves; Boltzmann equation;
D O I：
10.1016/S0304-8853(98)00395-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A detailed analysis of the current density distribution along the perpendicular direction of a spin-valve-like structure is presented. It is shown that, even when only bulk spin-dependent scattering is considered, the carriers responsible for the enhanced magnetoresistance in these systems are flowing in a narrow strip of the ferromagnetic layer close to the ferromagnetic/nonmagnetic interface. A modification of the bulk transport properties of this region affects drastically the giant magnetoresistance (GMR) of the overall structure. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：19 / 26
页数：8
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