Design of electron cyclotron resonance based reactive ion etching system

被引：0

作者：

Angra, SK ^{[1
]}

Kumar, P ^{[1
]}

Bajpai, RP ^{[1
]}

机构：

[1] Cent Sci Instruments Org, Sector 30, Chandigarh 160020, India

来源：

INDIAN JOURNAL OF ENGINEERING AND MATERIALS SCIENCES | 2001年 / 8卷 / 04期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Designs of the subsystems of the Electron Cyclotron Resonance (ECR) plasma stream source at frequency 2.45 GHz are explored. The assembled machine on this design has been evaluated using Langmuir probe and etching of Si based compound. The plasma densities have been found to be above the critical value at this frequency and etching rates are compatible to the reported values.

引用

页码：205 / 208

页数：4

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