Oxidation Behavior of ZrB2-SiC-TaC Ceramics

被引：48
|
作者：
Wang, Yiguang [1 ]
Ma, Baisheng [1 ]
Li, Lulu [1 ]
An, Linan [1 ,2 ]
机构：
[1] Northwestern Polytech Univ, Natl Key Lab Thermostruct Composite, Xian 710072, Shaanxi, Peoples R China
[2] Univ Cent Florida, Adv Mat Proc & Anal Ctr, Orlando, FL 32816 USA
来源：
JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2012年 / 95卷 / 01期
关键词：
HIGH-TEMPERATURE CERAMICS; RESISTANCE; POLYCARBOSILANE; ADDITIVES; TAB2; ZRB2;
D O I：
10.1111/j.1551-2916.2011.04945.x
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
ZrB2SiCTaC ceramics with different content of TaC were prepared by hot-pressing at 1800 degrees C in vacuum environment. The oxidation behavior of these ceramics was studied in the temperature range of 1200 degrees C1500 degrees C in air. It was found that low concentration of TaC (10 similar to vol%) deteriorated the oxidation resistance of ZrB2SiC, while high concentration of TaC (30 similar to vol%) significantly improved the oxidation resistance of the ceramics. Reoxidation experiments indicated that the metallic species (tantalum and/or silicon) diffusing out of the materials into the oxides was initially involved in the controlling process.
引用
收藏
页码：374 / 378
页数：5
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