Initial stages of Ba adsorption on the Si(100)-(2x1) surface at room temperature

被引：27
|
作者：
Yao, X
Hu, XM
Sarid, D [1 ]
Yu, Z
Wang, J
Marshall, DS
Droopad, R
Abrokwah, JK
Hallmark, JA
Ooms, WJ
机构：
[1] Univ Arizona, Ctr Opt Sci, Tucson, AZ 85721 USA
[2] Motorola Phoenix Corp Res Labs, Tempe, AZ 85284 USA
来源：
PHYSICAL REVIEW B | 1999年 / 59卷 / 07期
关键词：
D O I：
10.1103/PhysRevB.59.5115
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Scanning tunneling microscopy has been used to study the initial stages of room-temperature adsorption of Ba atoms on a clean Si(100)-(2 X 1) surface. It is found that most Ba atoms an located at type C defects, which stabilizes the dimer buckling in their vicinity, while the rest are located at single dimer sites on top of the Si dimer rows. Analysis of the images reveals that the Ba-Si(100) interactions are mediated by a partial charge transfer from the adsorbate to the substrate. [S0163-1829(99)03207-5].
引用
收藏
页码：5115 / 5119
页数：5
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