Realization of AlGaN/GaN HEMTs on 3C-SiC/Si(111) substrates

Cubic SiC/Si (111) template is an interesting alternative for growing GaN on silicon. As compared with silicon, this substrate allows reducing the stress in GaN films due to both lower lattice and thermal expansion coefficient mismatch, and can provide better heat dissipation. In this work, we first developed the epitaxial growth of 3C-SiC films on 50 mm Si(111) substrates using chemical vapor deposition. AlGaN/GaN high electron mobility transistors were grown by molecular beam epitaxy on these films. Both the structural quality and the behavior of transistors realized on these structures show the feasibility of this approach.