Ab-initio calculations of the electronic structure and cohesive properties of the orthorhombic oxynitrides X2N2O (X = C, Si, Ge)

被引:0
|
作者
Ivanovskii, AL [1 ]
Medvedeva, NI
Kontsevoi, OY
Shveikin, GP
机构
[1] Inst Solid State Chem, Ekaterinburg 620219, Russia
[2] Northwestern Univ, Dept Phys & Astron, Evanston, IL 60208 USA
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2000年 / 221卷 / 02期
关键词
D O I
10.1002/1521-3951(200010)221:2<647::AID-PSSB647>3.0.CO;2-B
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The full-potential LMTO method was used fur the investigation of the electronic structure and chemical bonding of the silicon, germanium and hypothetical carbon oxynitrides. The isovalent substitution of Si by C allows to compare the role of Si and C in the processes of chemical bonding and cohesive properties it was shown that doping by carbon may lead to stronger covalent bonding and therefore the new ceramic materials based on the Si-C-Al-O-N system can have improved mechanical characteristics.
引用
收藏
页码:647 / 655
页数:9
相关论文
共 50 条
  • [21] Electronic and optical properties of CuInSe2 from ab-initio calculations
    Feng Jing
    Xiao Bing
    Chen Jing-Chao
    ACTA PHYSICA SINICA, 2007, 56 (10) : 5990 - 5995
  • [22] Electronic structure of LaFe2X2 (X = Si,Ge)
    Hase, I.
    Yanagisawa, T.
    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 2011, 471 (21-22): : 656 - 658
  • [23] AB-INITIO STUDY OF SI(001)2X1/C CHEMISORPTION SURFACE
    YAMAUCHI, J
    KOBAYASHI, K
    TSUKADA, M
    SURFACE SCIENCE, 1994, 306 (1-2) : 42 - 51
  • [24] VACANCY-INDUCED 2X2 RECONSTRUCTION OF THE SI-TERMINATED 3C SIC(111) SURFACE - AB-INITIO CALCULATIONS OF THE ATOMIC AND ELECTRONIC-STRUCTURE
    WENZIEN, B
    KACKELL, P
    BECHSTEDT, F
    SURFACE SCIENCE, 1995, 331 : 1105 - 1109
  • [25] Spin-polarized calculations of structural, electronic and magnetic properties of Half Heusler alloys FeVX (X=Si, Ge, Sn) using Ab-initio method
    Sattar, M. Atif
    Rashid, Muhammad
    Hashmi, M. Raza
    Rasool, M. Nasir
    Mahmood, Asif
    Ahmad, S. A.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2016, 51 : 48 - 54
  • [26] Study ab-initio of the stability of the structural and electronic properties of Bi1- x Mg (x) O
    Abdel Rahim-Garzon, Gladys Patricia
    Arbey Rodriguez-Martinez, Jairo
    Guadalupe Moreno-Armenta, Maria
    REVISTA ITECKNE, 2014, 11 (01): : 84 - 92
  • [27] AB-INITIO CALCULATIONS OF THE PROPERTIES OF NO+ IN ITS GROUND ELECTRONIC-STATE X(1)SIGMA(+)
    FEHER, M
    MARTIN, PA
    CHEMICAL PHYSICS LETTERS, 1993, 215 (06) : 565 - 570
  • [28] Ab-initio investigations for structural, optoelectronic and thermoelectric properties of Li2BeXSe4 (X = Ge, Si, Sn) compounds
    Labrim, H.
    Karim, H.
    Hajji, M.
    Lakhal, M.
    Hartiti, B.
    El Bouayadi, R.
    Lfakir, A.
    COMPUTATIONAL CONDENSED MATTER, 2023, 35
  • [29] Ab-initio study of mechanical, half-metallic and optical properties of Mn2ZrX (X = Ge, Si) compounds
    Anjami, Arash
    Boochani, Arash
    Elahi, Seyed Moahammad
    Akbari, Hossein
    RESULTS IN PHYSICS, 2017, 7 : 3522 - 3529
  • [30] Hydrogen-induced nanotunnel structure on the C-terminated β-SiC(001)-c(2 x 2) surface investigated by ab-initio calculations
    Rosso, E. F.
    Baierle, R. J.
    Orellana, W.
    Miwa, R. H.
    APPLIED SURFACE SCIENCE, 2015, 357 : 1753 - 1757