Carbon nanotube growth for GHz devices

被引：0

作者：

Li, SD ^{[1
]}

Yu, Z ^{[1
]}

Gadde, G ^{[1
]}

Burke, PJ ^{[1
]}

Tang, WC ^{[1
]}

机构：

[1] Univ Calif Irvine, Irvine, CA 92697 USA

来源：

2003 THIRD IEEE CONFERENCE ON NANOTECHNOLOGY, VOLS ONE AND TWO, PROCEEDINGS | 2003年

关键词：

D O I：

暂无

中图分类号：

O69 [应用化学];

学科分类号：

081704 ;

摘要：

Horizontally oriented single walled carbon nanotubes are grown with CVD between lithographically defined catalyst sites. Single walled carbon nanotubes up to 60 mum in length are grown using methane as the feedstock. The nanoparticle catalyst is deposited from a newly developed aqueous solution requiring only photoresist and optical lithography. Carbon nanotube Y-junctions are also observed and characterized.

引用

页码：256 / 258

页数：3

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