Photoinduced Current Transient Spectroscopy of High-Resistivity Layered GaSe Crystals

被引：4
|
作者：
Odrinsky, A. P. [1 ]
机构：
[1] Natl Acad Sci Belarus, Inst Tech Acoust, Vitebsk 210017, BELARUS
来源：
SEMICONDUCTORS | 2010年 / 44卷 / 07期
关键词：
DEEP LEVELS;
D O I：
10.1134/S1063782610070031
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The defects in a high-resistivity p-GaSe single crystal are investigated by the method of photoinduced current transient spectroscopy. The results show the presence of traps corresponding to the gallium vacancy and extended defects. The traps with thermal-activation energies of 0.13, 0.39, and 0.53 eV are also detected. Their nature is discussed.
引用
收藏
页码：854 / 856
页数：3
相关论文
共 50 条
  • [21] CONSTANCY OF CHARGE AT MINIMA OF DARK CURRENT FLOWING IN HIGH-RESISTIVITY SINGLE CRYSTALS OF CDS
    TIMAN, BL
    KARPOVA, AP
    SOVIET PHYSICS SOLID STATE,USSR, 1970, 12 (05): : 1226 - +
  • [22] INSTABILITY OF CURRENT IN HIGH-RESISTIVITY COMPENSATED SEMICONDUCTORS
    BARANENKOV, AI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (10): : 1765 - +
  • [23] INVESTIGATION OF TRANSIENT ELECTRONIC PROCESSES IN HIGH-RESISTIVITY GAAS
    VOROBEV, YV
    KARKHANI.YI
    TRETYAK, OV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (02): : 254 - &
  • [24] USE OF HIGH-RESISTIVITY GAAS CRYSTALS IN MODULATION OF LIGHT
    BAGAEV, VS
    BEROZASH.YN
    GOGOLIN, OV
    KOPYLOVS.BD
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (08): : 1004 - +
  • [25] OHMIC ELECTRICAL CONTACTS TO HIGH-RESISTIVITY ZNS CRYSTALS
    BLOUNT, GH
    FISHER, MW
    MORRISON, RG
    BUBE, RH
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) : 690 - &
  • [26] Contacts for High-Resistivity (Cd,Mn)Te Crystals
    Witkowska-Baran, M.
    Mycielski, A.
    Kochanowska, D.
    Szadkowski, A. J.
    Jakiela, R.
    Witkowska, B.
    Kaliszek, W.
    Domagala, J.
    Lusakowska, E.
    Domukhovski, V.
    Dybko, K.
    Cui, Y.
    James, R. B.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2011, 58 (01) : 347 - 353
  • [27] Properties of heavily compensated high-resistivity GaSb crystals
    Milvidskaya, A.G.
    Polyakov, A.Y.
    Kolchina, G.P.
    Milnes, A.G.
    Govorkov, A.V.
    Smirnov, N.B.
    Tunitskaya, L.V.
    Materials science & engineering. B, Solid-state materials for advanced technology, 1994, B22 (2-3): : 279 - 282
  • [28] THE PROPERTIES OF HEAVILY COMPENSATED HIGH-RESISTIVITY GASB CRYSTALS
    MILVIDSKAYA, AG
    POLYAKOV, AY
    KOLCHINA, GP
    MILNES, AG
    GOVORKOV, AV
    SMIRNOV, NB
    TUNITSKAYA, IV
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 22 (2-3): : 279 - 282
  • [29] Thermoelectric effect spectroscopy and photoluminescence of high-resistivity CdTe:In
    Elhadidy, Hassan
    Franc, Jan
    Belas, Eduard
    Hlidek, Pavel
    Moravec, Pavel
    Grill, Roman
    Hoschl, Pavel
    JOURNAL OF ELECTRONIC MATERIALS, 2008, 37 (09) : 1219 - 1224
  • [30] Thermoelectric Effect Spectroscopy and Photoluminescence of High-Resistivity CdTe:In
    Hassan Elhadidy
    Jan Franc
    Eduard Belas
    Pavel Hlídek
    Pavel Moravec
    Roman Grill
    Pavel Hoschl
    Journal of Electronic Materials, 2008, 37 : 1219 - 1224
12345