Photoinduced Current Transient Spectroscopy of High-Resistivity Layered GaSe Crystals

被引：4

作者：

Odrinsky, A. P. ^{[1
]}

机构：

[1] Natl Acad Sci Belarus, Inst Tech Acoust, Vitebsk 210017, BELARUS

来源：

SEMICONDUCTORS | 2010年 / 44卷 / 07期

关键词：

DEEP LEVELS;

D O I：

10.1134/S1063782610070031

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The defects in a high-resistivity p-GaSe single crystal are investigated by the method of photoinduced current transient spectroscopy. The results show the presence of traps corresponding to the gallium vacancy and extended defects. The traps with thermal-activation energies of 0.13, 0.39, and 0.53 eV are also detected. Their nature is discussed.

引用

页码：854 / 856

页数：3

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