Fundamental Characteristics of SiC MIS Structure with Al2O3 as Gate Dielectric

被引:0
|
作者
Liu Li [1 ]
Ma Xiao Hua [1 ]
Yang Yin Tang [1 ]
机构
[1] Xidian Univ, Sch Microelect, Xian, Peoples R China
来源
ADVANCED MATERIALS AND STRUCTURES, PTS 1 AND 2 | 2011年 / 335-336卷
关键词
Al2O3; SiC MIS capacitor; Gate Leakage Current; C-V characteristics;
D O I
10.4028/www.scientific.net/AMR.335-336.1079
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
SiC MIS structure with ultra-thin Al2O3 as gate dielectric deposited by Atomic Layer Deposition(ALD) on epitaxial layer of 4H-SiC(0001)8(0)N-/N+ substrate is fabricated. The experimental results indicate that the prepared ultra Al2O3 gate dielectric exhibits good physical and electrical characteristics, including a high breakdown electrical field of 25MV/cm, excellent interface properties (2 x 10(13) cm(-2).eV(-1)) and low gate-leakage current (I-G=1x10(-3)A/cm(-2)@E-OX=8MV/cm). Analysis of current conduction mechanism in deposited Al2O3 gate dielectric has also been systematically performed. The confirmed conduction mechanisms consisted of FP emission, FN tunneling, DT and Schottky emission. And the dominance of these current conduction mechanisms depended on applied electrical field, When the gate leakage current mechanism is dominated by FN tunneling, the barrier height of SiC/Al2O3 is 1.4eV, which can meet the requirement of SiC MISFET devices.
引用
收藏
页码:1079 / 1085
页数:7
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