Computer simulation on low energy ion implantation based on molecular dynamics methods

被引：0

作者：

Ran, YJ ^{[1
]}

Gao, WY ^{[1
]}

Huang, R ^{[1
]}

Yu, M ^{[1
]}

Zhang, X ^{[1
]}

Wang, YY ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

CHINESE JOURNAL OF ELECTRONICS | 2000年 / 9卷 / 04期

关键词：

ion implantation; molecular dynamics; recoil interaction approximation; rare-event algorithm;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed a reliable and efficient molecular dynamics program LEACS to simulate the low energy ion implantation, In our code, the newest physical models are included and a great number of efficient algorithms are used to conduct realistic and accurate simulations. By comparing our simulation results with the SIMS data for B, As and P ranging from 10 keV to 70 keV implantation, we verified the correctness and efficiency of our code.

引用

页码：359 / 363

页数：5

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