Optoelectronic properties of hybrid diodes based on vanadyl-phthalocyanine and zinc oxide nanorods thin films

被引：13

作者：

Kiran, M. Raveendra ^{[1
,2
]}

Ulla, Hidayath ^{[2
,3
]}

Satyanarayan, M. N. ^{[2
]}

Umesh, G. ^{[2
]}

机构：

[1] Vignans Inst Informat Technol, Dept Phys, Visakhapatnam 530046, Andhra Pradesh, India

[2] Natl Inst Technol Karnataka, Dept Phys, Optoelect Lab, Mangalore 57502, India

[3] Indian Inst Technol Kanpur, Natl Ctr Flexible Elect, Kanpur 208016, Uttar Pradesh, India

来源：

OPTICAL MATERIALS | 2019年 / 96卷

关键词：

Hybrid photodiodes; Impedance spectroscopy; Mobility; Responsivity; Charge transport; NICKEL PHTHALOCYANINE; ORGANIC SEMICONDUCTOR; PHOTOVOLTAIC PROPERTIES; COPPER PHTHALOCYANINE; CONDUCTION PROPERTIES; ELECTRICAL-PROPERTIES; CHARGE-TRANSPORT; ZNO NANOWIRE; PHOTODIODES; SURFACE;

D O I：

10.1016/j.optmat.2019.109348

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Herein, we report the optoelectronic properties of hybrid diodes fabricated using vanadyl phthalocyanine (VOPc) and zinc oxide nanorods (ZNR) with the configuration: ITO/ZNRATOPc/MoO3/Al. Vertically aligned ZnO nanorods were grown using a simple aqueous solution (AS) method as a function of growth temperature. The correlation between the morphology of ZNR films and the optoelectronic properties of the ZNR/VOPc hybrid devices was investigated. The results show that the hybrid diodes with ZNR films grown at 120 degrees C offer the best optoelectronic properties. The higher photocurrent responsivity, R-ph, (16.28 A/W) was achieved for devices with ZNR films grown at 120 degrees C. This value is 25 times higher than the R-ph value obtained for the devices made with ZnO nanoparticle films that were reported earlier.

引用

页数：7

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