Research on the Preparation Methods of Silicon Oxide Thin Films

被引：0
|
作者：
Li, Chunwei [1 ]
Zhang, Qunli [1 ]
Xu, Shuyan [1 ]
Wang, Guiying [1 ]
机构：
[1] NE Forestry Univ, Harbin 150040, Peoples R China
来源：
FUNDAMENTAL OF CHEMICAL ENGINEERING, PTS 1-3 | 2011年 / 233-235卷
关键词：
silicon oxide; thin films; fabrication methods; SIOX; TEMPERATURE; DEPOSITION; COATINGS;
D O I：
10.4028/www.scientific.net/AMR.233-235.2556
中图分类号：
TQ [化学工业];
学科分类号：
0817 ;
摘要：
Silicon oxide thin films have many excellent properties such as hardness, optical,dielectric properties,wear-resistance and corrosion-resistance. It has been widely used in optical and microelectronic applications. The preparation methods mainly include phsical vapor deposition and chemical vapor deposition. The paper reviews a few preparation methods of silicon oxide thin films, and compares advantages and disadvantages w ith each other. On the other hand,it point out the tendency of development.
引用
收藏
页码：2556 / 2560
页数：5
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