Research on the Preparation Methods of Silicon Oxide Thin Films

被引：0

作者：

Li, Chunwei ^{[1
]}

Zhang, Qunli ^{[1
]}

Xu, Shuyan ^{[1
]}

Wang, Guiying ^{[1
]}

机构：

[1] NE Forestry Univ, Harbin 150040, Peoples R China

来源：

FUNDAMENTAL OF CHEMICAL ENGINEERING, PTS 1-3 | 2011年 / 233-235卷

关键词：

silicon oxide; thin films; fabrication methods; SIOX; TEMPERATURE; DEPOSITION; COATINGS;

D O I：

10.4028/www.scientific.net/AMR.233-235.2556

中图分类号：

TQ [化学工业];

学科分类号：

0817 ;

摘要：

Silicon oxide thin films have many excellent properties such as hardness, optical,dielectric properties,wear-resistance and corrosion-resistance. It has been widely used in optical and microelectronic applications. The preparation methods mainly include phsical vapor deposition and chemical vapor deposition. The paper reviews a few preparation methods of silicon oxide thin films, and compares advantages and disadvantages w ith each other. On the other hand,it point out the tendency of development.

引用

页码：2556 / 2560

页数：5

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