Growth of MgB2 thin films by chemical vapour deposition using B2H6 as a boron source

被引：0
|
作者：
Wang, SF
Zhu, YB
Liu, Z
Zhou, YL
Zhang, Q
Chen, ZH
Lu, HB
Yang, GZ
机构：
[1] Chinese Acad Sci, Inst Phys, Lab Opt Phys, Beijing 100080, Peoples R China
[2] Chinese Acad Sci, Ctr Condensed Mater Phys, Beijing 100080, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2003年 / 20卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Superconducting MgB2 thin films were grown on single crystal Al2O3 (0001) by chemical vapour deposition using B2H6, as a boron source. MgB2 film was then accomplished by annealing the boron precursor films in the presence of high-purity magnesium bulk at 890degreesC in vacuum. The as-grown MgB2 films are smooth and c-axis-oriented. The films exhibit a zero-resistance transition of about 38 K with a narrow transition width of 0.2 K. Magnetic hysteresis measurements yield the critical current density of 1.9 X 10(7) A/cm(2) at 10 K in zero field.
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页码：1356 / 1358
页数：3
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