Application and electronic structure of high-permittivity dielectrics

被引：57

作者：

Perevalov, T. V. ^{[1
]}

Gritsenko, V. A. ^{[1
]}

机构：

[1] Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Novosibirsk 630090, Russia

来源：

PHYSICS-USPEKHI | 2010年 / 53卷 / 06期

关键词：

ALTERNATIVE GATE DIELECTRICS; ATOMIC LAYER DEPOSITION; OPTICAL-PROPERTIES; TITANIUM-DIOXIDE; BAND-STRUCTURE; THIN-FILMS; 1ST-PRINCIPLES CALCULATION; SILICON DIOXIDE; ALUMINUM-OXIDE; GAMMA-ALUMINA;

D O I：

10.3367/UFNe.0180.201006b.0587

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Major applications of high-permittivity dielectric materials in silicon devices are reviewed. The basics and software implementations of the electron density functional method are considered. Results of first-principle calculations of the electronic structure are analyzed for the three most important and promising high-permittivity dielectrics, Al2O3, HfO2, and TiO2.

引用

页码：561 / 575

页数：15

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