Combining triboelectric nanogenerator with piezoelectric effect for optimizing Schottky barrier height modulation

被引:7
|
作者
Zhao, Luming [1 ,2 ,3 ]
Li, Hu [1 ]
Meng, Jianping [1 ,3 ]
Zhang, Yan [4 ,5 ]
Feng, Hongqin [1 ,3 ]
Wu, Yuxiang [6 ]
Li, Zhou [1 ,3 ,4 ]
机构
[1] Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing Key Lab Micronano Energy & Sensor, CAS Ctr Excellence Nanosci, Beijing 100083, Peoples R China
[2] Beijing Inst Basic Med Sci, Beijing 100850, Peoples R China
[3] Univ Chinese Acad Sci, Sch Nanosci & Technol, Beijing 100049, Peoples R China
[4] Guangxi Univ, Sch Phys Sci & Technol, Ctr Nanoenergy Res, Nanning 530004, Peoples R China
[5] Univ Elect Sci & Technol China, Sch Phys, Chengdu 610054, Peoples R China
[6] Jianghan Univ, Sch Phys Educ, Wuhan 430056, Peoples R China
基金
北京市自然科学基金; 国家重点研发计划; 中国国家自然科学基金;
关键词
ZnO nanowire; Triboelectric nanogenerator; Schottky barrier height; Piezotronic effect; Modulation; ZNO; PERFORMANCE; SENSITIVITY; SWITCHES; POLARITY; DEVICES; SENSORS;
D O I
10.1016/j.scib.2021.03.013
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Schottky-contacted sensors have been demonstrated to show high sensitivity and fast response time in various sensing systems. In order to improve their sensing performance, the Schottky barriers height (SBH) at the interface of semiconductor and metal electrode should be adjusted to appropriate range to avoid low output or low sensitivity, which was induced by excessively high or low SBH, respectively. In this work, a simple and effective SBH tuning method by triboelectric generator (TENG) is proposed, the SBH can be effectively lowered by voltage pulses generated by TENG and gradually recover over time after withdrawing the TENG. Through combining the TENG treatment with piezotronic effect, a synergistic effect on lowering SBH was achieved. The change of SBH is increased by 3.8 to 12.8 times, compared with dependent TENG treatment and piezotronic effect, respectively. Furthermore, the recovery time of the TENG-lowered SBH can be greatly shortened from 1.5 h to 40 s by piezotronic effect. This work demonstrated a flexible and feasible SBH tuning method, which can be used to effectively improve the sensitivity of Schottky-contact sensor and sensing system. Our study also shows great potential in broadening the application scenarios of Schottky-contacted electronic devices. (c) 2021 Science China Press. Published by Elsevier B.V. and Science China Press. All rights reserved.
引用
收藏
页码:1409 / 1418
页数:10
相关论文
共 50 条
  • [41] On the effect of spontaneous polarization on the height of the Schottky barrier at the metal-ferroelectric contact
    Yarmarkin, V. K.
    Shul'man, S. G.
    Lemanov, V. V.
    PHYSICS OF THE SOLID STATE, 2013, 55 (03) : 547 - 550
  • [42] On the effect of spontaneous polarization on the height of the Schottky barrier at the metal-ferroelectric contact
    V. K. Yarmarkin
    S. G. Shul’man
    V. V. Lemanov
    Physics of the Solid State, 2013, 55 : 547 - 550
  • [43] Effect of surface treatment on Schottky barrier height of p-type GaN
    Kim, JK
    Lee, JL
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2003, 150 (03) : G209 - G211
  • [44] THE BARRIER HEIGHT AND INTERFACE EFFECT OF A AU-N-GAN SCHOTTKY DIODE
    KHAN, MRH
    DETCHPROHM, T
    HACKE, P
    HIRAMATSU, K
    SAWAKI, N
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1995, 28 (06) : 1169 - 1174
  • [45] Effect of inhomogeneous Schottky barrier height of SnO2 nanowires device
    Amorim, Cleber A.
    Bernardo, Eric P.
    Leite, Edson R.
    Chiquito, Adenilson J.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 33 (05)
  • [46] W/SI SCHOTTKY DIODES - EFFECT OF SPUTTERING DEPOSITION CONDITIONS ON THE BARRIER HEIGHT
    MAMOR, M
    DUFOURGERGAM, E
    FINKMAN, L
    TREMBLAY, G
    MEYER, F
    BOUZIANE, K
    APPLIED SURFACE SCIENCE, 1995, 91 (1-4) : 342 - 346
  • [47] Effect of Tunneling Current on Schottky Barrier Height in ZnO Varistors at Low Temperature
    Li Sheng-Tao
    Yang Yan
    Zhang Le
    Cheng Peng-Fei
    Li Jian-Ying
    CHINESE PHYSICS LETTERS, 2009, 26 (07)
  • [48] Remarkably enhanced hybrid piezo/triboelectric nanogenerator via rational modulation of piezoelectric and dielectric properties for self-powered electronics
    Wang, Weichao
    Zhang, Jiawei
    Zhang, Yaju
    Chen, Fangqi
    Wang, Heyi
    Wu, Mengjun
    Li, Hui
    Zhu, Quanyong
    Zheng, Haiwu
    Zhang, Renyun
    APPLIED PHYSICS LETTERS, 2020, 116 (02)
  • [49] Schottky barrier engineering in III-V nitrides via the piezoelectric effect
    Yu, ET
    Dang, XZ
    Yu, LS
    Qiao, D
    Asbeck, PM
    Lau, SS
    Sullivan, GJ
    Boutros, KS
    Redwing, JM
    APPLIED PHYSICS LETTERS, 1998, 73 (13) : 1880 - 1882