Light emission from erbium-doped nanocrystalline silicon/silicon dioxide layers under strong optical excitation

被引：0

作者：

Kashkarov, PK ^{[1
]}

Shalygina, OA ^{[1
]}

Zhigunov, DM ^{[1
]}

Sapun, DA ^{[1
]}

Teterukov, SA ^{[1
]}

Timoshenko, VY ^{[1
]}

Heitmann, J ^{[1
]}

Schmidt, M ^{[1
]}

Zacharias, M ^{[1
]}

Imakita, K ^{[1
]}

Fujii, M ^{[1
]}

Hayashi, S ^{[1
]}

机构：

[1] Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, Russia

来源：

Advanced Laser Technologies 2004 | 2005年 / 5850卷

关键词：

photoluminescence; nanocrystals; erbium ions; population inversion;

D O I：

10.1117/12.633527

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Photoluminescence properties of Er-doped nanocrystalline Si/SiO2 structures have been investigated under strong optical excitation. The energy of optical excitation of Si nanocrystals was shown to be almost completely transferred to Er3+ ions in surrounding SiO2. It was found that at high pump intensity the energy transfer process competes successfully with nonradiative Auger-recombination in Si nanocrystals. At high excitation level the population inversion of Er3+ ions was achieved and a decrease of the decay time of the photoluminescence at 1.5 mu m was observed. Possible mechanisms of the shortening of the Er3+ ion lifetime are discussed.

引用

页码：20 / 24

页数：5

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