Second harmonic generation of CO2 laser using thick quasi-phase-matched GaAs layer grown by hydride vapour phase epitaxy

被引：13
|
作者：
Becouarn, L [1 ]
Gerard, B [1 ]
Brévignon, M [1 ]
Lehoux, J [1 ]
Gourdel, Y [1 ]
Lallier, E [1 ]
机构：
[1] Thomson CSF, Cent Rech Lab, F-91404 Orsay, France
来源：
ELECTRONICS LETTERS | 1998年 / 34卷 / 25期
关键词：
D O I：
10.1049/el:19981660
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The growth of a 100 mu m thick GaAs layer with antiphase domains (APDs) by hydride vapour phase epitaxy on a diffusion bonded stack as the template substrate is reported. The domains are preserved during the growth with straight and vertical boundaries. Second harmonic generation from a CO2 laser was generated and used to assess the nonlinear efficiency of the template.
引用
收藏
页码：2409 / 2410
页数：2
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