Second harmonic generation of CO2 laser using thick quasi-phase-matched GaAs layer grown by hydride vapour phase epitaxy

被引：13

作者：

Becouarn, L ^{[1
]}

Gerard, B ^{[1
]}

Brévignon, M ^{[1
]}

Lehoux, J ^{[1
]}

Gourdel, Y ^{[1
]}

Lallier, E ^{[1
]}

机构：

[1] Thomson CSF, Cent Rech Lab, F-91404 Orsay, France

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 25期

关键词：

D O I：

10.1049/el:19981660

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The growth of a 100 mu m thick GaAs layer with antiphase domains (APDs) by hydride vapour phase epitaxy on a diffusion bonded stack as the template substrate is reported. The domains are preserved during the growth with straight and vertical boundaries. Second harmonic generation from a CO2 laser was generated and used to assess the nonlinear efficiency of the template.

引用

页码：2409 / 2410

页数：2

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