Nonequilibrium paramagnetic susceptibility of gallium impurity centers in lead telluride

被引:3
|
作者
Vasil'ev, AN [1 ]
Voloshok, TN
Kuvshinnikov, SV
Volkov, BA
机构
[1] Moscow MV Lomonosov State Univ, Moscow 119899, Russia
[2] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 117924, Russia
基金
俄罗斯基础研究基金会;
关键词
D O I
10.1134/1.558728
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The temperature dependences of the resistance and magnetic susceptibility are studied in gallium-doped lead telluride, which is characterized by a delayed photoconductivity effect, under various illumination conditions. After a sample is illuminated at low temperatures, the magnetic susceptibility is diamagnetic in the region of metallic delayed conductivity (for T < 50 K). In the region of thermodynamic equilibrium (T > 70 K), where conductivity is activational, the magnetic susceptibility is likewise diamagnetic and essentially equals the low-temperature value. A paramagnetic susceptibility peak is observed in the transitional region (T similar to 50-70 K), where the conductivity is of a nonequilibrium character but the carriers are still nondegenerate. This peak increases in magnitude with the rate of measurements in the indicated temperature range. In addition, a paramagnetic variation of the susceptibility following the Curie law is observed with uncontrollable (weak) illumination from the cryostat cap at low temperatures (T < 25 K). The interpretation of the observed dependences is based on notions of variable valence of gallium in lead telluride, while the appearance of a paramagnetic susceptibility peak is attributed to the presence of shallow localized levels of gallium in a trivalent state. (C) 1998 American Institute of Physics. [S1063-7761(98)02311-7].
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页码:1009 / 1013
页数:5
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