Nonequilibrium paramagnetic susceptibility of gallium impurity centers in lead telluride

被引:3
|
作者
Vasil'ev, AN [1 ]
Voloshok, TN
Kuvshinnikov, SV
Volkov, BA
机构
[1] Moscow MV Lomonosov State Univ, Moscow 119899, Russia
[2] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 117924, Russia
基金
俄罗斯基础研究基金会;
关键词
D O I
10.1134/1.558728
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The temperature dependences of the resistance and magnetic susceptibility are studied in gallium-doped lead telluride, which is characterized by a delayed photoconductivity effect, under various illumination conditions. After a sample is illuminated at low temperatures, the magnetic susceptibility is diamagnetic in the region of metallic delayed conductivity (for T < 50 K). In the region of thermodynamic equilibrium (T > 70 K), where conductivity is activational, the magnetic susceptibility is likewise diamagnetic and essentially equals the low-temperature value. A paramagnetic susceptibility peak is observed in the transitional region (T similar to 50-70 K), where the conductivity is of a nonequilibrium character but the carriers are still nondegenerate. This peak increases in magnitude with the rate of measurements in the indicated temperature range. In addition, a paramagnetic variation of the susceptibility following the Curie law is observed with uncontrollable (weak) illumination from the cryostat cap at low temperatures (T < 25 K). The interpretation of the observed dependences is based on notions of variable valence of gallium in lead telluride, while the appearance of a paramagnetic susceptibility peak is attributed to the presence of shallow localized levels of gallium in a trivalent state. (C) 1998 American Institute of Physics. [S1063-7761(98)02311-7].
引用
收藏
页码:1009 / 1013
页数:5
相关论文
共 50 条
  • [1] Nonequilibrium paramagnetic susceptibility of gallium impurity centers in lead telluride
    A. N. Vasil’ev
    T. N. Voloshok
    S. V. Kuvshinnikov
    B. A. Volkov
    Journal of Experimental and Theoretical Physics, 1998, 87 : 1009 - 1013
  • [2] IMPURITY STATES OF GALLIUM IN LEAD-TELLURIDE
    VEIS, AN
    KAIDANOV, VI
    KOSTYLEVA, NA
    MELNIK, RB
    UKHANOV, YI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (05): : 630 - 631
  • [3] PHASE-TRANSITION IN LEAD-TELLURIDE WITH A GALLIUM IMPURITY
    ERASOVA, NA
    INORGANIC MATERIALS, 1984, 20 (03) : 460 - 462
  • [4] PHOTOLUMINESCENCE OF GALLIUM IMPURITY IN CADMIUM TELLURIDE
    WROBEL, JM
    DUBOWSKI, JJ
    BECLA, P
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (02): : 338 - 342
  • [5] INFLUENCE OF THE THALLIUM IMPURITY BAND ON THE MAGNETIC-SUSCEPTIBILITY OF LEAD-TELLURIDE
    ANDRONIK, KI
    BOIKO, MP
    LUZHKOVSKII, AV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (10): : 1190 - 1191
  • [6] STATES OF PARAMAGNETIC IMPURITIES AND LASER-INDUCED DECOMPOSITION OF IMPURITY CLUSTERS IN LEAD-TELLURIDE
    GROMOVOJ, YS
    PLYATSKO, SV
    SIZOV, FF
    DARCHUCK, SD
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1989, 1 (37) : 6625 - 6631
  • [7] ALLOYING OF LEAD-TELLURIDE BY GALLIUM
    LAZARENKO, MA
    GASKOV, AM
    ZLOMANOV, VP
    NOVOSELOVA, AV
    DOKLADY AKADEMII NAUK SSSR, 1981, 259 (06): : 1375 - 1378
  • [8] IMPURITY STATES OF THALLIUM IN LEAD-TELLURIDE
    VEIS, AN
    KAIDANOV, VI
    NEMOV, SA
    EMELIN, SN
    KSENDZOV, AY
    SHALABUTOV, YK
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (01): : 106 - 107
  • [9] NATURE OF INDIUM IMPURITY STATES IN LEAD TELLURIDE
    AVERKIN, AA
    KAIDANOV, VI
    MELNIK, RB
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (01): : 75 - +
  • [10] IONIZED IMPURITY SCATTERING OF ELECTRONS IN LEAD TELLURIDE
    STAVITSKAYA, TS
    STILBANS, LS
    SOVIET PHYSICS-SOLID STATE, 1961, 2 (09): : 1868 - 1870