Atomic layer epitaxy and molecular beam epitaxy of CdTe/MnTe superlattices: A structural and optical study

被引:9
|
作者
Hartmann, JM
Kany, F
Charleux, M
Samson, Y
Rouviere, JL
Mariette, H
机构
[1] CEA Grenoble, CNRS Grp Microstruct & Semicond 2 6, Dept Rech Fondamentale Mat Condensee, SP2M, F-38054 Grenoble 9, France
[2] Univ Grenoble 1, CNRS Grp Microstruct Semicond 2 6, Spectrometrie Phys Lab, CEA, F-38402 St Martin Dheres, France
关键词
D O I
10.1063/1.368648
中图分类号
O59 [应用物理学];
学科分类号
摘要
Atomic layer epitaxy (ALE) is investigated together with conventional molecular beam epitaxy (MBE) for the growth of CdTe/MnTe superlattices. A systematic structural and magneto-optical study demonstrates that: (i) all Mn atoms incident on the surface get incorporated; however, when a quantity superior or equal to 1 monolayer of Mn is sent onto the surface per ALE cycle, the growth front roughens, leading to the formation of MnTe islands, (ii) optimized atomic layer epitaxy allows us to obtain at 280 degrees C CdTe/ MnTe superlattices with a better control than in conventional MBE, but does not prevent the exchange between Cd and Mn atoms from occurring at the interfaces, (iii) low temperature ALE (200 degrees C and lower) seems to be a promising way of obtaining more abrupt interfaces. A precise value of the ratio of the elastic coefficients 2c(12)/c(11) is otherwise inferred through this study for zincblende MnTe (1.12). (C) 1998 American Institute of Physics. [S0021-8979(98)06020-4].
引用
收藏
页码:4300 / 4308
页数:9
相关论文
共 50 条
  • [31] MOLECULAR-BEAM EPITAXY AND ATOMIC-LAYER EPITAXY GROWTH MECHANISMS FOR ZNSE(100)
    FARRELL, HH
    TAMARGO, MC
    DEMIGUEL, JL
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02): : 767 - 768
  • [32] USE OF ATOMIC LAYER EPITAXY BUFFER FOR THE GROWTH OF INSB ON GAAS BY MOLECULAR-BEAM EPITAXY
    THOMPSON, PE
    DAVIS, JL
    WATERMAN, J
    WAGNER, RJ
    GAMMON, D
    GASKILL, DK
    STAHLBUSH, R
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (10) : 7166 - 7172
  • [33] CONDITIONS FOR THE DEPOSITION OF CDTE BY ELECTROCHEMICAL ATOMIC LAYER EPITAXY
    GREGORY, BW
    SUGGS, DW
    STICKNEY, JL
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (05) : 1279 - 1284
  • [34] ELECTRICAL AND PHOTOLUMINESCENCE PROPERTIES OF UNDOPED GASB PREPARED BY MOLECULAR-BEAM EPITAXY AND ATOMIC LAYER MOLECULAR-BEAM EPITAXY
    BOSACCHI, A
    FRANCHI, S
    ALLEGRI, P
    AVANZINI, V
    BARALDI, A
    GHEZZI, C
    MAGNANINI, R
    PARISINI, A
    TARRICONE, L
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 844 - 848
  • [35] Comparison of morphology of CdTe/CdMnTe interfaces in heterostructures grown by molecular beam epitaxy in a standard and atomic layer modes
    Godlewski, M
    Wojtowicz, T
    Karczewski, G
    Kossut, J
    Bergman, JP
    Monemar, B
    APPLIED PHYSICS LETTERS, 1998, 72 (09) : 1104 - 1106
  • [36] HGTE AND CDTE EPITAXIAL LAYERS AND HGTE-CDTE SUPERLATTICES GROWN BY LASER MOLECULAR-BEAM EPITAXY
    CHEUNG, JT
    NIIZAWA, G
    MOYLE, J
    ONG, NP
    PAINE, BM
    VREELAND, T
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04): : 2086 - 2090
  • [37] ATOMIC LAYER EPITAXY GROWTH OF ZNS ON (100) GAAS USING MOLECULAR-BEAM EPITAXY SYSTEM
    TADOKORO, T
    OHTA, S
    ISHIGURO, T
    ICHINOSE, Y
    KOBAYASHI, S
    YAMAMOTO, N
    JOURNAL OF CRYSTAL GROWTH, 1995, 148 (03) : 223 - 231
  • [38] PROPERTIES OF CD1-XMNXTE-CDTE SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY
    BICKNELL, RN
    GILESTAYLOR, NC
    BLANKS, DK
    YANKA, RW
    BUCKLAND, EL
    SCHETZINA, JF
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 709 - 713
  • [39] IMPURITY DOPING OF HGTE-CDTE SUPERLATTICES DURING GROWTH BY MOLECULAR-BEAM EPITAXY
    WROGE, ML
    PETERMAN, DJ
    FELDMAN, BJ
    MORRIS, BJ
    LEOPOLD, DJ
    BROERMAN, JG
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (02): : 435 - 439
  • [40] ATOMIC LAYER MOLECULAR-BEAM EPITAXY OF INAS/ALAS HETEROSTRUCTURES
    VAZQUEZ, M
    SILVEIRA, JP
    GONZALEZ, L
    PEREZ, M
    ARMELLES, G
    DEMIGUEL, JL
    BRIONES, F
    JOURNAL OF CRYSTAL GROWTH, 1990, 102 (04) : 891 - 898