Urbach tail and electric field influence on optical properties of InSe and InSe:Er single crystals

被引:11
|
作者
Kundakci, M. [1 ]
Guerbulak, B. [1 ]
Dogan, S. [1 ]
Ates, A. [1 ]
Yildirim, M. [1 ]
机构
[1] Ataturk Univ, Fac Arts & Sci, Dept Phys, TR-25240 Erzurum, Turkey
来源
关键词
D O I
10.1007/s00339-007-4307-z
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
InSe and InSe:Er single crystals were grown by using the Bridgman-Stockbarger method. The absorption measurements were carried out for voltage U=0 and U=30 V states of InSe and InSe:Er samples in the temperature range of 10-320 K with a step of 10 K. The absorption edge shifted towards longer wavelengths and the intensity of the absorption spectra decreased under a 5.90 kV/cm electric field. The same binding energy values for InSe and InSe:Er were calculated as 22.2 and 14.2 meV at U=0 and U=30 V, respectively. The steepness parameters and Urbach energies for InSe and InSe:Er samples increased with increasing sample temperature in the range of 10-320 K. An applied electric field caused a shift and a decrease of the intensity of the absorption spectra and an increase in the Urbach energy and steepness parameters. The shift of the absorption edge can be explained on the basis of the Franz-Keldysh effect or thermal heating of the sample under the electric field.
引用
收藏
页码:479 / 485
页数:7
相关论文
共 50 条
  • [21] OPTICAL PROPERTIES OF InSe SINGLE CRYSTALS NEAR THE FUNDAMENTAL ABSORPTION EDGE - 1.
    Bakumenko, V.L.
    Kovalyuk, Z.D.
    Kurbatov, L.N.
    Chishko, V.F.
    Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1976, 10 (06): : 621 - 625
  • [22] Tunable electronic and optical properties of InSe/arsenene heterostructure by vertical strain and electric field
    Deng, X. Q.
    Jing, Q.
    PHYSICS LETTERS A, 2021, 405
  • [23] PHOTOCONDUCTIVITY OF INSE SINGLE-CRYSTALS
    DEBLASI, C
    MICOCCI, G
    RIZZO, A
    TEPORE, A
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 74 (01): : 291 - 296
  • [24] ANISOTROPY OF THE ELECTRICAL-PROPERTIES OF INSE SINGLE-CRYSTALS
    KAMINSKII, VM
    KOVALYUK, ZD
    MINTYANSKII, IB
    TOVARNITSKII, MV
    INORGANIC MATERIALS, 1984, 20 (11) : 1666 - 1667
  • [25] Mass attenuation coefficients for n-type InSe, InSe:Gd, InSe:Ho and InSeEr single crystals
    Içelli, O
    Erzeneoglu, S
    Gürbulak, B
    JOURNAL OF QUANTITATIVE SPECTROSCOPY & RADIATIVE TRANSFER, 2005, 90 (3-4): : 399 - 407
  • [26] Charge transfer along localized states in InSe and InSe⟨Sn⟩ single crystals
    Mustafaeva, S. N.
    Ismailov, A. A.
    Asadov, M. M.
    LOW TEMPERATURE PHYSICS, 2010, 36 (04) : 310 - 312
  • [27] Structural and electrical properties of boron doped InSe single crystals
    Ertap, Huseyin
    Karabulut, Mevlut
    MATERIALS RESEARCH EXPRESS, 2019, 6 (03)
  • [28] Structure and magnetic properties of InSe single crystals intercalated by nickel
    I. M. Stakhira
    N. K. Tovstyuk
    V. L. Fomenko
    V. M. Tsmots
    A. N. Shchupliak
    Semiconductors, 2011, 45 : 1258 - 1263
  • [29] On the specific electrophysical properties of n-InSe single crystals
    Abdinov, A. Sh.
    Babaeva, R. F.
    Rzaev, R. M.
    Ragimova, N. A.
    Amirova, S. I.
    SEMICONDUCTORS, 2016, 50 (01) : 34 - 37
  • [30] On the specific electrophysical properties of n-InSe single crystals
    A. Sh. Abdinov
    R. F. Babaeva
    R. M. Rzaev
    N. A. Ragimova
    S. I. Amirova
    Semiconductors, 2016, 50 : 34 - 37