Large area deposition of hydrogenated amorphous silicon by VHF-PECVD using novel electrodes

被引：7
|
作者：
Ito, N [1 ]
Kondo, M [1 ]
Matsuda, A [1 ]
机构：
[1] Anelva Corp, Fuchu, Tokyo 1838508, Japan
来源：
CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年
关键词：
D O I：
10.1109/PVSC.2000.916029
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
A novel discharge source capable of depositing a-Si:H films on large area has been developed. This discharge source consists of "U" shaped loop-antenna. A number of antennas were arranged in parallel to each other, forming one plane in front of a substrate. A-Si:H was deposited on a 1000 mm x 500 mm glass substrate at 0.4 nm/sec using VHF(81 MHz) plasma. The non-uniformity of deposition rate in the direction along the antenna was about +/- 80% when the VHF power was equally fed to each antenna with a continuous mode. Whereas, this non-uniformity could be suppressed to less than +/- 10% by controlling the power feeding method with a pulse mode.
引用
收藏
页码：900 / 903
页数：4
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