Molecular beam epitaxy of InAlN/GaN heterostructures for high electron mobility transistors

被引：36

作者：

Katzer, DS

Storm, DF

Binari, SC

Shanabrook, BV

Torabi, A

Zhou, L

Smith, DJ

机构：

[1] USN, Res Lab, Div Elect Sci & Technol, Washington, DC 20375 USA

[2] Raytheon RF Components, Andover, MA 01810 USA

[3] Arizona State Univ, Ctr Solid State Sci, Tempe, AZ 85287 USA

[4] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2005年 / 23卷 / 03期

关键词：

D O I：

10.1116/1.1927103

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe the growth of InAIN/GaN heterostructures by rf-plasma molecular beam epitaxy. Due to the weak In-N bond, the MAIN growth temperature must be below about 460 degrees C for In to incorporate reliably into the film. Thus far, a thin AIN spacer layer has been required to form a low resistance two dimensional electron gas (2DEG) at the InAIN/GaN interface. The thin AIN barrier is believed to reduce alloy scattering of carriers in the 2DEG. The best HEMT material with an MAIN barrier and a thin AIN spacer layer has a sheet resistance of 980 Omega/rectangle with a sheet electron density of 1.96 X 10(13) cm(-2). (c) 2005 American Vacuum Society.

引用

页码：1204 / 1208

页数：5

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