Review of laser microscale processing of silicon carbide

A review of various laser techniques for microscale processing of SiC for microelectronics and microelectromechanical-system applications is presented. SiC is an excellent material for harsh environments due to its outstanding mechanical, thermal, and chemical properties. However, its extreme thermodynamic stability and inert properties created difficulties in conventional microfabrication methods which provided an opportunity for the exploration of laser processing as an alternative. Many aspects of laser processing of SiC are investigated across the globe using wavelengths ranging from 193 to 1064 nm and pulse widths from nanosecond to femtosecond regimes with results indicating that lasers can become successful tools for SiC microprocessing in the future. This paper is categorized into additive and subtractive laser techniques in order to facilitate a discussion of all processes used for fabricating SiC microdevices. (C) 2011 Laser Institute of America.