CMOS Envelope Tracking Amplifier IC Design for High-Efficiency RF Polar Transmitters

被引：0
|
作者：
Wu, Po-Hsing [1 ]
Li, Yan [1 ]
Hu, Weibo [1 ]
Lopez, J. [1 ]
Lie, Donald Y. C. [1 ]
Liang, T. J. [2 ]
机构：
[1] Texas Tech Univ, Dept Elect & Comp Engn, Lubbock, TX 79409 USA
[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan, Taiwan
来源：
2011 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS) | 2011年
关键词：
POWER-AMPLIFIER; ELIMINATION;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A monolithic polar transmitter (TX) subsystem that includes a CMOS Envelope Tracking (ET) amplifier and a RF SiGe BiCMOS power amplifier (PA) for mobile WiMAX applications is presented. Several versions of the ET amplifiers are designed and their power consumption and bandwidth considerations are discussed. Consequently, the entire polar TX system performances and design trade-offs are presented and compared against different ET amplifiers design. The IC occupies a total area of 1x1.4 mm(2) and is being fabricated in a TSMC 0.35 mu m SiGe BiCMOS process. RF/Analog/Digital system co-simulation indicates that the overall ET-based polar TX system exhibits 30% Power-Added-Efficiency (PAE) and 4.6% Error Vector Magnitude (EVM) at 19dBm PA output power and passes the stringent output spectral mask for a 10 MHz mobile WiMAX 64QAM signal with similar to 10dB Peak-to-Average-Power Ratio (PAR).
引用
收藏
页码：197 / 200
页数：4
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