Activation behavior and dielectric relaxation of nanocrystalline zinc ferrite

被引:10
|
作者
Choudhury, S. [1 ]
Sinha, M. [2 ]
Dutta, H. [3 ]
Mandal, M. K. [1 ]
Pradhan, S. K. [2 ]
Meikap, A. K. [1 ]
机构
[1] Natl Inst Technol, Dept Phys, Burdwan 713209, W Bengal, India
[2] Univ Burdwan, Dept Phys, Burdwan 713104, W Bengal, India
[3] Vivekananda Coll, Dept Phys, Burdwan 713103, W Bengal, India
关键词
Zinc Ferrite; Nanostructures; X-ray diffraction; Dielectric properties; Microstructure; MAGNETIC-PROPERTIES; MICROSTRUCTURE CHARACTERIZATION; TRANSPORT PROPERTIES; AC CONDUCTION; CHALCOGENIDE;
D O I
10.1016/j.materresbull.2014.09.002
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report the ac conductivity and dielectric relaxation studies of nanocrystalline zinc ferrite prepared by the ball milling. The real part of the complex ac conductivity is found to follow the universal dielectric response sigma'(f)alpha T(n)f(s) and values of both s and n show an anomalous behavior. Both the magnitude of the temperature exponent 'n' and thermal activation energy for ac conduction strongly depends on frequencies. The dielectric constant exhibits strong temperature dependence at higher temperature and lower frequencies. The dielectric properties of the samples have been analyzed in terms of electric modulus vector. The complex impedance has also been modeled by an ideal equivalent circuit consisting of grain and grain boundary resistances and capacitances. Considering the formation of Schottky diode at the metallic electrode and semiconductor junction, the diode parameters like built in voltage and space charge density have been extracted from the capacitance-voltage characteristics. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码:446 / 452
页数:7
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