Device performance of ferroelectric/correlated oxide heterostructures for non-volatile memory applications

Ferroelectric field effect devices offer the possibility of non-volatile data storage. Attempts to integrate perovskite ferroelectric materials with silicon semiconductors, however, have been largely unsuccessful in creating non-volatile, nondestructive read memory elements because of difficulties in controlling the ferroelectric/semiconductor interface. Correlated oxide systems have been explored as alternative channel materials to form all-perovskite field effect devices. We examine a non-volatile memory using an electric-field-induced metal-insulator transition in PbZr0.2Ti0.8O3/La1-xSrxMnO3 (PZT/LSMO), PZT/La1-xCaxMnO3 (PZT/LCMO) and PZT/La1-xSrxCoO3 (PZT/LSCO) devices. The performance of these devices in the areas of switching time and retention are discussed.