Compact Stacked Rugged GaN Low-Noise Amplifier MMIC

被引：3

作者：

Kaule, Evelyne ^{[1
]}

Luo, Peng ^{[2
,3
]}

Andrei, Cristina ^{[1
]}

Chevtchenko, Serguei A. ^{[4
]}

Rudolph, Matthias ^{[1
,4
]}

机构：

[1] Brandenburg Univ Technol Cottbus Senftenberg BTU, Cottbus, Germany

[2] BTU, Beijing, Peoples R China

[3] Chengdu Danxi Technol Co Ltd, Chengdu, Peoples R China

[4] Leibniz Inst Hochstfrequenztech FBH, Ferdinand Braun Inst gGmbH, Berlin, Germany

来源：

2021 IEEE INTERNATIONAL CONFERENCE ON MICROWAVES, ANTENNAS, COMMUNICATIONS AND ELECTRONIC SYSTEMS (COMCAS) | 2021年

关键词：

GaN; ruggedness; low-noise amplifier (LNA); MMIC; receiver;

D O I：

10.1109/COMCAS52219.2021.9629072

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Rugged GaN HEMT LNAs are well established components for high-performance microwave receivers. In a previous work, we introduced the concept of a stacked circuit topology, which allows for a power handling capability exceeding conventional GaN HEMT designs. In this paper, we present an improved design of a stacked GaN LNA MMIC, showing that the concept is capable of providing competitive noise figures while minimizing the requirement for additional chip area.

引用

页码：286 / 288

页数：3

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