Compact Stacked Rugged GaN Low-Noise Amplifier MMIC under Input Power Overdrive Condition

被引:0
|
作者
Kaule, Evelyne [1 ]
Luo, Peng [1 ,2 ]
Chevtchenko, Serguei A. [3 ]
Rudolph, Matthias [1 ,3 ]
Andrei, Cristina [1 ]
机构
[1] Brandenburg Univ Technol Cottbus Senftenberg BTU, Ulrich L Rohde Chair RF & Microwave Tech, Cottbus, Germany
[2] Chengdu DanXi Technol Co Ltd, Chengdu, Peoples R China
[3] Ferdinand Braun Inst FBH, Berlin, Germany
关键词
GaN; HEMT; low-noise amplifier; LNA; MMIC; ruggedness; overdrive condition; receiver;
D O I
10.23919/EuMIC58042.2023.10288650
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Rugged GaN HEMT LNAs are well established in the receive path of T/R front ends. In order to further enhance the ruggedness against high input powers, stacked transistors can be used in the first stage of the LNA. This work aims to prove that the stack achieves 2W higher ruggedness relative to a standard LNA while preserving competitive small-signal properties, especially low noise figure. Therefore, we present the measured small-signal parameters and the stress measurements under high input powers of a stacked GaN LNA MMIC, combining a low noise figure around 2.6 dB in C-band with a ruggedness, that is verified up to an input power of 40 dBm.
引用
收藏
页码:9 / 12
页数:4
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