Compact High-Precision Models for Silicon p-n Step Junction Avalanche-Breakdown Voltages

被引：2

作者：

Bauer, Friedhelm D. ^{[1
]}

机构：

[1] Asea Brown Boveri Switzerland Ltd, Corp Res Ctr, CH-5405 Baden, Switzerland

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 03期

关键词：

Impact-ionization coefficients; silicon p-n junction breakdown; temperature dependence; IMPACT-IONIZATION; RATES; MULTIPLICATION; ELECTRON; HOLES;

D O I：

10.1109/TED.2010.2101077

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Advanced silicon impact-ionization models are linked with simple accurate 1-D breakdown-voltage formulas for p-n step junctions. The models are useful for ab initio calculations and improve the accuracy of older models due to a new parameterization based on a numerical simulation. New parameters for effective impact-ionization coefficients are presented for Chynoweth and Fulop formulations. The parameter sets are based on impact-ionization models of Van Overstraeten and De Man and of the Universita di Bologna, including its recent updates. They allow quick computing of silicon p-n junction breakdown voltages from 10 V to 10 kV with maximum deviation from numerical data of +/-5%. The new breakdown-voltage models account for the junction temperature and the depletion on both sides of the p-n junction.

引用

页码：658 / 663

页数：6

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