Visible luminescence of porous amorphous Si1-xCx:: H due to selective dissolution of silicon

被引:8
|
作者
Rerbal, K [1 ]
Jomard, F
Chazalviel, JN
Ozanam, F
Solomon, I
机构
[1] Ecole Polytech, CNRS, Phys Mat Condensee Lab, F-91128 Palaiseau, France
[2] CNRS, Lab Phys Solide & Cristallogenese, F-92195 Meudon, France
关键词
D O I
10.1063/1.1589180
中图分类号
O59 [应用物理学];
学科分类号
摘要
Room-temperature photoluminescence of porous hydrogenated amorphous silicon-carbon alloys (a- Si1-xCx : H) has been studied for different carbon concentrations. Porous a- Si1-xCx : H luminesces at energies much higher than the bulk material. Secondary ion mass spectroscopy reveals that the carbon content is higher in the porous layer than in the starting material, which accounts for the blueshifting of the luminescence into the visible range. (C) 2003 American Institute of Physics.
引用
收藏
页码:45 / 47
页数:3
相关论文
共 50 条
  • [1] Selective dissolution of silicon in porous amorphous Si1-xCx:H
    Rerbal, K
    Jomard, F
    Chazalviel, JN
    Ozanam, F
    Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 9, 2005, 2 (09): : 3445 - 3448
  • [2] Transient photoconductivity in amorphous Si1-xCx:H
    Pohlmann, A.
    Fischer, R.
    Bruggemann, R.
    Stolz, W.
    Goebel, E.O.
    Journal of Non-Crystalline Solids, 1991, 137-38 (pt 1) : 547 - 550
  • [3] Temperature dependence of photoluminescence in amorphous Si1-xCx:H films
    Rerbal, K.
    Solomon, I.
    Chazalviel, J. -N.
    Ozanam, F.
    EUROPEAN PHYSICAL JOURNAL B, 2006, 51 (01): : 61 - 64
  • [4] PHOTO-LUMINESCENCE IN GLOW-DISCHARGE DEPOSITED AMORPHOUS SI1-XCX - H FILMS
    WATANABE, I
    HATA, Y
    MORIMOTO, A
    SHIMIZU, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (10): : L613 - L615
  • [5] Temperature dependence of photoluminescence in amorphous Si1-xCx:H films
    K. Rerbal
    I. Solomon
    J.-N. Chazalviel
    F. Ozanam
    The European Physical Journal B - Condensed Matter and Complex Systems, 2006, 51 : 61 - 64
  • [6] Measurement and analysis of composition and depth profile of h in amorphous Si1-xCx:H films
    Hua Wei
    Yao Shu-De
    Wang Kun
    Ding Zhi-Bo
    CHINESE PHYSICS LETTERS, 2008, 25 (07) : 2677 - 2679
  • [7] Structure and chemical order of bulk Si1-xCx amorphous alloys
    Mura, D
    Colombo, L
    Bertoncini, R
    Mula, G
    PHYSICAL REVIEW B, 1998, 58 (16) : 10357 - 10362
  • [8] FRICTION AND WEAR BEHAVIOR OF AMORPHOUS HYDROGENATED SI1-XCX FILMS
    MENEVE, J
    JACOBS, R
    EERSELS, L
    SMEETS, J
    DEKEMPENEER, E
    SURFACE & COATINGS TECHNOLOGY, 1993, 62 (1-3): : 577 - 582
  • [9] NMR AND IR STUDIES ON HYDROGENATED AMORPHOUS SI1-XCX FILMS
    NAKAZAWA, K
    UEDA, S
    KUMEDA, M
    MORIMOTO, A
    SHIMIZU, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (03): : L176 - L178
  • [10] Comparative study of porous amorphous a-Si1-xCx films and a-Si1-xCx membranes on structural and luminescence properties
    Boukezzata, A.
    Nezzal, G.
    Guerbous, L.
    Keffous, A.
    Gabouze, N.
    Belkacem, Y.
    Manseri, A.
    Brighet, A.
    Kechouane, M.
    Menari, H.
    JOURNAL OF LUMINESCENCE, 2011, 131 (06) : 1184 - 1188