Measurement and analysis of composition and depth profile of h in amorphous Si1-xCx:H films

被引：0
|
作者：
Hua Wei [1 ]
Yao Shu-De [1 ]
Wang Kun [1 ]
Ding Zhi-Bo [1 ]
机构：
[1] Peking Univ, Sch Phys, Dept Tech Phys, Beijing 100871, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2008年 / 25卷 / 07期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Composition in amorphous Si1.xCx:H heteroepitaxial thin films on Si (100) by plasma enhanced chemical vapour deposition (PECVD) is analysed. The unknown x (0.45-0.57) and the depth profile of hydrogen in the thin films are characterized by Rutherford backscattering spectrum (RBS), resonance-nuclear reaction analysis (R-NRA) and elastic recoil detection (ERD), respectively. In addition, the depth profile of hydrogen in the unannealed thin films is compared to that of the annealed thin films with rapid thermal annealing (RTA) or laser spike annealing (LSA) in nitrogen atmosphere. The results indicate that the stoichiometric amorphous SiC can be produced by PECVD when the ratio of CH4/SiH4 is approximately equal to 25. The content of hydrogen decreases suddenly from 35% to 1% after 1150 degrees C annealing. RTA can reduce hydrogen in SiC films effectively than LSA.
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页码：2677 / 2679
页数：3
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