Phase-change RF switches with Robust Switching Cycle Endurance

被引：0

作者：

Moon, Jeong-sun ^{[1
]}

Seo, Hwa-change ^{[1
]}

Son, Kyung-ah ^{[1
]}

Lee, Kangmu ^{[1
]}

Zehnder, Daniel ^{[1
]}

Tai, Haw ^{[1
]}

Le, Dustin ^{[1
]}

机构：

[1] HRL Labs, Malibu, CA 90265 USA

来源：

2018 IEEE RADIO & WIRELESS SYMPOSIUM (RWS) | 2018年

关键词：

RF switches; phase-change material; wireless communications; reliability; power handling; insertion loss;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the first SbTe phase-change material RF switches with a refractory TiW heater in a planar configuration. With the planar layout and heater reliability, a record switching cycle endurance of > 300K was demonstrated. With on-state resistance of 0.5 ohm* mm and off-state capacitance of 75 fF/mm, the RF switch figure-of-merit (FOM) is 4.1 THz, which is 6-7 times better than state-of-the-art RF switches, including RF silicon-on-insulator technology. With further layout optimization, SbTe phase-change material RF switches could be a potential candidate for future RF switch technology.

引用

页码：231 / 233

页数：3

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