IQE and EQE of the nitride-based UV/DUV LEDs

被引：0
|
作者：
Amano, H. [1 ,2 ,3 ]
Park, G. J. [1 ]
Tanikawa, T. [1 ]
Honda, Y. [1 ,2 ]
Yamaguchi, M. [1 ,2 ]
Ban, K.
Nagata, K. [4 ]
Nonaka, K. [4 ]
Takeda, K. [4 ]
Iwaya, M. [4 ]
Takeuchi, T. [4 ]
Kamiyama, S. [4 ]
Akasaki, I. [2 ,4 ]
机构：
[1] Nagoya Univ, Grad Sch Engn, Chikusa Ku, C3-1 631 Furo Cho, Nagoya, Aichi 4648603, Japan
[2] Nagoya Univ, Akasaki Res Ctr, Chikusa Ku, Nagoya, Aichi 4648603, Japan
[3] Nagoya Univ, Plasma Nanotechnol Res Ctr, Chikusa Ku, Nagoya, Aichi 4648603, Japan
[4] Meijo Univ, Fac Sci & Engn, Tempaku Ku, Nagoya 4688502, Japan
来源：
2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2011年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Internal and external quantum efficiency and injection efficiency of nitride-based UV/DUV devices were investigated. Non radiative component in the photoluminescence and electroluminescence is found to be strongly correlated with the dislocation density.
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页数：2
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