IQE and EQE of the nitride-based UV/DUV LEDs

被引：0

作者：

Amano, H. ^{[1
,2
,3
]}

Park, G. J. ^{[1
]}

Tanikawa, T. ^{[1
]}

Honda, Y. ^{[1
,2
]}

Yamaguchi, M. ^{[1
,2
]}

Ban, K.

Nagata, K. ^{[4
]}

Nonaka, K. ^{[4
]}

Takeda, K. ^{[4
]}

Iwaya, M. ^{[4
]}

Takeuchi, T. ^{[4
]}

Kamiyama, S. ^{[4
]}

Akasaki, I. ^{[2
,4
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Chikusa Ku, C3-1 631 Furo Cho, Nagoya, Aichi 4648603, Japan

[2] Nagoya Univ, Akasaki Res Ctr, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[3] Nagoya Univ, Plasma Nanotechnol Res Ctr, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[4] Meijo Univ, Fac Sci & Engn, Tempaku Ku, Nagoya 4688502, Japan

来源：

2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2011年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Internal and external quantum efficiency and injection efficiency of nitride-based UV/DUV devices were investigated. Non radiative component in the photoluminescence and electroluminescence is found to be strongly correlated with the dislocation density.

引用

页数：2

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