2.23GHz gating InGaAs/InP single-photon avalanche diode for quantum key distribution

被引:30
|
作者
Zhang, Jun [1 ]
Eraerds, Patrick [1 ]
Walenta, Nino [1 ]
Barreiro, Claudio [1 ]
Thew, Rob [1 ]
Zbinden, Hugo [1 ]
机构
[1] Univ Geneva, Appl Phys Grp, CH-1211 Geneva 4, Switzerland
来源
关键词
single-photon avalanche diode; avalanche photodiode; single-photon detection; photon counting; rapid gating; quantum cryptography; PHOTODIODES;
D O I
10.1117/12.862118
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We implement an InGaAs/InP single-photon avalanche diode (SPAD) for single-photon detection with the fastest gating frequency reported so far, of 2.23GHz, which approaches the limit given by the bandwidth of the SPAD -2.5 GHz. We propose a useful way to characterize the afterpulsing distribution for rapid gating that allows for easy comparison with conventional gating regimes. We compare the performance of this rapid gating scheme with free-running detector and superconducting single-photon detector (SSPD) for the coherent one-way quantum key distribution (QKD) protocol. The rapid gating system is well suited for both high-rate and long-distance QKD applications, in which Mbps key rates can be achieved for distances less than 40km with 50 ns deadtime and the maximum distance is limited to similar to 190km with 5 mu s deadtime. These results illustrate that the afterpulsing is no longer a limiting factor for QKD.
引用
收藏
页数:8
相关论文
共 50 条
  • [31] Active quenching circuit for a InGaAs single-photon avalanche diode
    郑丽霞
    吴金
    时龙兴
    奚水清
    刘斯扬
    孙伟锋
    Journal of Semiconductors, 2014, 35 (04) : 155 - 160
  • [32] Fully programmable single-photon detection module for InGaAs/InP single-photon avalanche diodes with clean and sub-nanosecond gating transitions
    Tosi, Alberto
    Della Frera, Adriano
    Shehata, Andrea Bahgat
    Scarcella, Carmelo
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2012, 83 (01):
  • [33] High crosstalk suppression in InGaAs/InP single-photon avalanche diode arrays by carrier extraction structure
    Tang, Yongsheng
    Wang, Rui
    Yang, Xiaohong
    He, Tingting
    Liu, Yijun
    Zhao, Meng
    NATURE COMMUNICATIONS, 2024, 15 (01)
  • [34] Characterization of an advanced harmonic subtraction single-photon detection system based on an InGaAs/InP avalanche diode
    Bienfang, Joshua C.
    Restelli, Alessandro
    ADVANCED PHOTON COUNTING TECHNIQUES X, 2016, 9858
  • [35] Design, Fabrication, and Characteristic Analysis of 64 × 64 InGaAs/InP Single-Photon Avalanche Diode Array
    Shuai Wang
    Han Ye
    Liyan Geng
    Ziqing Lu
    Feng Xiao
    Fan Xiao
    Qin Han
    Journal of Electronic Materials, 2022, 51 : 2692 - 2697
  • [36] Low dark count rate and low timing jitter InGaAs/InP Single-Photon Avalanche Diode
    Tosi, Alberto
    Sanzaro, Mirko
    Calandri, Niccolo
    Ruggeri, Alessandro
    Acerbi, Fabio
    PROCEEDINGS OF THE 2014 44TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2014), 2014, : 82 - 85
  • [37] High crosstalk suppression in InGaAs/InP single-photon avalanche diode arrays by carrier extraction structure
    Yongsheng Tang
    Rui Wang
    Xiaohong Yang
    Tingting He
    Yijun Liu
    Meng Zhao
    Nature Communications, 15
  • [38] Active Area Uniformity of InGaAs/InP Single-Photon Avalanche Diodes
    Tosi, A.
    Acerbi, F.
    Dalla Mora, A.
    Itzler, M. A.
    Jiang, X.
    IEEE PHOTONICS JOURNAL, 2011, 3 (01): : 31 - 41
  • [39] High-performance InGaAs/InP single-photon avalanche photodiode
    Liu, Mingguo
    Hu, Chong
    Bai, Xiaogang
    Guo, Xiangyi
    Campbell, Joe C.
    Pan, Zhong
    Tashima, M. M.
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2007, 13 (04) : 887 - 894
  • [40] Dependence of Functional Parameters of Sine-Gated InGaAs/InP Single-Photon Avalanche Diodes on the Gating Parameters
    Losev, Anton
    Zavodilenko, Vladimir
    Koziy, Andrey
    Kurochkin, Yury
    Gorbatsevich, Alexander
    IEEE PHOTONICS JOURNAL, 2022, 14 (02):