Black Phosphorus n-MOSFETs with Record Transconductance

被引:0
|
作者
Haratipour, Nazila [1 ]
Robbins, Matthew C. [1 ]
Koester, Steven J. [1 ]
机构
[1] Univ Minnesota Twin Cities, ECE Dept, 200 Union St SE, Minneapolis, MN 55455 USA
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:243 / 244
页数:2
相关论文
共 50 条
  • [41] Thin SiGe buffers with high Ge content for n-MOSFETs
    Lyutovich, K
    Bauer, M
    Kasper, E
    Herzog, HJ
    Perova, T
    Maurice, R
    Hofer, C
    Teichert, C
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 89 (1-3): : 341 - 345
  • [42] HOT CARRIER DEGRADATION IN N-MOSFETS USED AS PASS TRANSISTORS
    MISTRY, K
    DOYLE, B
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (11) : 2415 - 2416
  • [43] Spectroscopic observations of photon emissions in n-MOSFETs in the saturation region
    Tao, JM
    Chan, DSH
    Chim, WK
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1996, 29 (05) : 1380 - 1385
  • [44] RANDOM TELEGRAPH SIGNALS IN DEEP-SUBMICRON N-MOSFETS
    SHI, ZM
    MIEVILLE, JP
    DUTOIT, M
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (07) : 1161 - 1168
  • [45] Low temperature behavior of strained-Si n-MOSFETs
    Mahato, S. S.
    Mitra, D.
    Maiti, T. K.
    Chakraborty, P.
    Senapati, B.
    Chakravorty, A.
    Sarkar, S. K.
    Maiti, C. K.
    PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007, 2007, : 115 - +
  • [46] 1/f noise behaviors of NO-nitrided n-MOSFETs
    Xu, JP
    Lai, PT
    Cheng, YC
    SOLID-STATE ELECTRONICS, 2001, 45 (03) : 431 - 433
  • [47] An analytical model of mobility in nano-scaled n-MOSFETs
    Dai Yue-Hua
    Chen Jun-Ning
    Ke Dao-Ming
    Sun Jia-E
    Hu Yuan
    ACTA PHYSICA SINICA, 2006, 55 (11) : 6090 - 6094
  • [48] A study on hot-carrier-induced photoemission in n-MOSFETs
    Matsuda, T
    Matsuyama, N
    Hosoi, K
    Kameda, E
    Ohzone, T
    IEICE TRANSACTIONS ON ELECTRONICS, 1999, E82C (04) : 593 - 601
  • [49] Effective Mass Approach for n-MOSFETs on Arbitrarily Oriented Wafers
    Anisur Rahman
    Mark Lundstrom
    Avik W. Ghosh
    Journal of Computational Electronics, 2004, 3 : 281 - 285
  • [50] Analytical subthreshold surface potential model for pocket n-MOSFETs
    Pang, YS
    Brews, JR
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (12) : 2209 - 2216