Electronic states and optical properties of silicon nanocrystals terminated by dimers

被引：12
|
作者：
Nishida, M [1 ]
机构：
[1] Kanazawa Inst Technol, Dept Phys, Nonoichi, Ishikawa 9218501, Japan
来源：
SOLID STATE COMMUNICATIONS | 2000年 / 116卷 / 12期
关键词：
nanostructures; semiconductors; electronic states (localized); optical properties;
D O I：
10.1016/S0038-1098(00)00407-5
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
An electronic state calculation for Si nanocrystals terminated by Si-Si dimers is reported by using the extended Huckel-type nonorthogonal tight-binding method. It is shown that dimer-related surface states appear in the range up to 1 eV below the conduction band edge in all the Si nanocrystals studied, in good agreement with experimentally observed electron trap states in porous Si, and that these surface states in the dimer configuration have stronger optical coupling with the valence band edge in Si nanocrystals than the conduction band edge in the dihydride-terminated configuration, explaining a significant part of the mechanisms governing the luminescence properties of porous Si. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：655 / 659
页数：5
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