Improvement of light extraction from patterned polymer encapsulated GaN-based flip-chip light-emitting diodes by imprinting

被引:36
|
作者
Bao, Kui [1 ,2 ]
Kang, Xiang Ning [1 ,2 ]
Zhang, Bei [1 ,2 ]
Dai, Tao [1 ,2 ]
Xiong, Chang [1 ,2 ]
Ji, Hang [1 ,2 ]
Zhang, Guo Yi [1 ,2 ]
Chen, Yong [3 ,4 ]
机构
[1] Peking Univ, Sch Phys, Beijing 100871, Peoples R China
[2] Peking Univ, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China
[3] Peking Univ, Sch Phys, Beijing 100871, Peoples R China
[4] Lab Photon & Nanostruct, F-91460 Marcoussis, France
基金
中国国家自然科学基金;
关键词
gratings; light-emitting diodes (LEDs); nanotechnology;
D O I
10.1109/LPT.2007.908731
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
To improve surface light extraction of GaN-based flip-chip light-emitting diodes (FC-LEDs), we employed an imprint approach of thermosetting polymer for patterning microscale surface grating on the polymer encapsulant. One-dimensional (1-D) and two-dimensional (2-D) taper-like polymer gratings with a period of 6 mu m were successfully realized on encapsulant above the sapphire backplane of GaN LED. By adopting the 1-D and 2-D taper-like grating encapsulant, the improvement of light extraction from the I mm x 1 mm FC-blue LED with a reflective Ag film on the p-side was about 18.5% and 31.9% compared to the LED encapsulated by flat polymer, respectively. To evaluate the concept of a diffraction grating in enhancement of light extraction, we performed a simulation of diffraction based on 1-D rigorous coupled wave analysis with the supporting experiments.
引用
收藏
页码:1840 / 1842
页数:3
相关论文
共 50 条
  • [41] Improvement of extraction efficiency for GaN-based light emitting diodes
    YanKuin Su
    ChunYuan Huang
    JianJhong Chen
    ChienChih Kao
    ChunFu Tsai
    Science China Technological Sciences, 2010, 53 : 322 - 325
  • [42] High Performance of GaN-Based Flip-Chip Light-Emitting Diodes with Hole-Shape Patterned ITO Ohmic Contact Layer and Agin Reflector
    Lee, Sang Hern
    Baek, Jong Hyeob
    Kim, Tae Hoon
    Park, Lee Soon
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2011, 11 (10) : 8695 - 8699
  • [43] Improvement of extraction efficiency for GaN-based light emitting diodes
    SU YanKuin
    CHEN JianJhong
    KAO ChienChih
    TSAI ChunFu
    Science China(Technological Sciences), 2010, (02) : 322 - 325
  • [44] Improvement of extraction efficiency for GaN-based light emitting diodes
    Su YanKuin
    Huang ChunYuan
    Chen JianJhong
    Kao ChienChih
    Tsai ChunFu
    SCIENCE CHINA-TECHNOLOGICAL SCIENCES, 2010, 53 (02) : 322 - 325
  • [45] Improvement of extraction efficiency for GaN-based light emitting diodes
    SU YanKuin
    CHEN JianJhong
    KAO ChienChih
    TSAI ChunFu
    Science China(Technological Sciences), 2010, 53 (02) : 322 - 325
  • [46] Improvement of extraction efficiency for GaN-based light emitting diodes
    SU YanKuin
    HUANG ChunYuan
    CHEN JianJhong
    KAO ChienChih
    TSAI ChunFu
    中国科学:技术科学, 2010, (02) : 205 - 205
  • [47] Functional imprinting structures on GaN-based light-emitting diodes for light pattern modulation and light extraction efficiency enhancement
    Sheng-Han Tu
    Shang-Yen Wu
    Yeeu-Chang Lee
    Jui-Wen Pan
    Cheng-Huang Kuo
    Chih-Ming Wang
    Jenq-Yang Chang
    Optical Review, 2010, 17 : 379 - 384
  • [48] Nanoparticle embedded p-type electrodes for GaN-based flip-chip light emitting diodes
    Kwak, Joon Seop
    Song, J. -O.
    Seong, T. -Y.
    Kim, B. I.
    Cho, J.
    Sone, C.
    Park, Y.
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2006, 6 (11) : 3547 - 3550
  • [49] Functional imprinting structures on GaN-based light-emitting diodes for light pattern modulation and light extraction efficiency enhancement
    Tu, Sheng-Han
    Wu, Shang-Yen
    Lee, Yeeu-Chang
    Pan, Jui-Wen
    Kuo, Cheng-Huang
    Wang, Chih-Ming
    Chang, Jenq-Yang
    OPTICAL REVIEW, 2010, 17 (04) : 379 - 384
  • [50] Design of patterned sapphire substrates for GaN-based light-emitting diodes
    王海燕
    林志霆
    韩晶磊
    钟立义
    李国强
    Chinese Physics B, 2015, 24 (06) : 21 - 28