Effective Solution to Reticle Haze Formation at 193nm Lithography

被引:0
|
作者
Tseng, Wen-Jui [1 ]
Chiou, Shean-Hwan [1 ]
Chiu, Ming-Chien [2 ]
Lee, Po-Shin [2 ]
机构
[1] Rexchip Elect Corp, 429-1 Sanfong Rd, Houli Township, Taichung County, Taiwan
[2] Gudeng Precis Ind Co LTD, Taipei, Taiwan
来源
LITHOGRAPHY ASIA 2008 | 2008年 / 7140卷
关键词
Haze defects; N-2/CDA purging; 193nm lithography; haze control;
D O I
10.1117/12.804629
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Various studies have been published on the formation and prevention of reticle haze; however, yield loss due to reticle haze is still an issue for most of the IC makers. For a mass production IC manufacturing fab, an easy and practical solution is needed to prevent haze generation. In this study, we focus on the solution, which can be easily implemented inside production fab and does not require a total implementation of specific type of gas or equipment. A reticle carrier with purging function combining with the use of a purge station for purging and storage is used. After implementing this solution in a 12 '' DRAM fabrication facility, the number of wafers printed without haze development on reticles protected by this solution can be up to 150,000 wafers, and this is great achievement in help ramping up the production and also maintain high yield. This solution has been proven to be effective in reducing the generation of haze.
引用
收藏
页数:8
相关论文
共 50 条
  • [41] Quantitative Pattern Collapse Metrology for 193nm Immersion Lithography
    Winroth, Gustaf
    Gronheid, Roel
    Lin, Chua
    Neishi, Katsumi
    Harukawa, Ryota
    Marcuccilli, Gino
    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2011, 24 (02) : 233 - 238
  • [42] Defect studies of resist process for 193nm immersion lithography
    Ando, Tomoyuki
    Ohmori, Katsumi
    Maemori, Satoshi
    Takayama, Toshikazu
    Ishizuka, Keita
    Yoshida, Masaaki
    Hirano, Tomoyuki
    Yokoya, Jiro
    Nakano, Katsushi
    Fujiwara, Tomoharu
    Owa, Soichi
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXIII, PTS 1 AND 2, 2006, 6153 : U203 - U210
  • [43] Fast resist modeling and its application in 193nm lithography
    Yuan, L
    Neureuther, A
    Croffie, E
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXI, PTS 1 AND 2, 2004, 5376 : 1023 - 1030
  • [44] Organosiloxane based bottom antireflective coatings for 193nm lithography
    Kennedy, J
    Baldwin-Hendricks, T
    Stuck, J
    Suedmeyer, A
    Thanawala, S
    Do, K
    Iwamoto, N
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XX, PTS 1 AND 2, 2003, 5039 : 929 - 939
  • [45] Approaching the numerical aperture of water - Immersion lithography at 193nm
    Smith, BW
    Bourov, A
    Fan, YF
    Zavyalova, L
    Lafferty, N
    Cropanese, F
    OPTICAL MICROLITHOGRAPHY XVII, PTS 1-3, 2004, 5377 : 273 - 284
  • [46] Negative-tone TSI process for 193nm lithography
    Kuhara, K
    Mori, S
    Kaimoto, Y
    Morisawa, T
    Ohfuji, T
    Sasago, M
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XV, PTS 1 AND 2, 1998, 3333 : 188 - 194
  • [47] Topcoat-free photoresists for 193nm immersion lithography
    IBM Almaden Research Center, 650 Harry Rd., San Jose, CA 95120, United States
    Microlithogr World, 2007, 3 (8-11+13):
  • [48] Acid amplification of chemically amplified resists for 193nm lithography
    Ohfuji, T
    Takahashi, M
    Kuhara, K
    Ogawa, T
    Ohtsuka, H
    Sasago, M
    Ichimura, K
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIV, 1997, 3049 : 76 - 82
  • [49] Modeling chemically-amplified resists for 193nm lithography
    Croffie, E
    Cheng, MS
    Neureuther, A
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVII, PTS 1 AND 2, 2000, 3999 : 171 - 180
  • [50] Requirements and challenges for lithography... Beyond 193nm optics
    Canning, J
    ICMTS 1998: PROCEEDINGS OF THE 1998 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, 1998, : 25 - 28