Effective Solution to Reticle Haze Formation at 193nm Lithography

被引:0
|
作者
Tseng, Wen-Jui [1 ]
Chiou, Shean-Hwan [1 ]
Chiu, Ming-Chien [2 ]
Lee, Po-Shin [2 ]
机构
[1] Rexchip Elect Corp, 429-1 Sanfong Rd, Houli Township, Taichung County, Taiwan
[2] Gudeng Precis Ind Co LTD, Taipei, Taiwan
来源
LITHOGRAPHY ASIA 2008 | 2008年 / 7140卷
关键词
Haze defects; N-2/CDA purging; 193nm lithography; haze control;
D O I
10.1117/12.804629
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Various studies have been published on the formation and prevention of reticle haze; however, yield loss due to reticle haze is still an issue for most of the IC makers. For a mass production IC manufacturing fab, an easy and practical solution is needed to prevent haze generation. In this study, we focus on the solution, which can be easily implemented inside production fab and does not require a total implementation of specific type of gas or equipment. A reticle carrier with purging function combining with the use of a purge station for purging and storage is used. After implementing this solution in a 12 '' DRAM fabrication facility, the number of wafers printed without haze development on reticles protected by this solution can be up to 150,000 wafers, and this is great achievement in help ramping up the production and also maintain high yield. This solution has been proven to be effective in reducing the generation of haze.
引用
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页数:8
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