Hot-wire chemical vapor deposition epitaxy on polycrystalline silicon seeds on glass

During the last few years, hot-wire chemical vapor deposition (HWCVD) has been explored as a low-temperature process for epitaxially thickening c-Si seeds layers on low cost substrates. Here, we demonstrate HWCVD epitaxy on thin polycrystalline silicon seed layers on borosilicate glass substrates. The crystal Si seeds are large-grained (similar to 10 mu m) polycrystalline silicon that were fabricated by Al-induced crystallization of a-Si. We report the growth of 0.5 mu m of epitaxy at similar to 670 degrees C.