Spin injection into a graphene thin film at room temperature

被引：154

作者：

Ohishi, Megumi ^{[1
]}

Shiraishi, Masashi ^{[1
]}

Nouchi, Ryo ^{[1
]}

Nozaki, Takayuki ^{[1
]}

Shinjo, Teruya ^{[1
]}

Suzuki, Yoshishige ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2007年 / 46卷 / 25-28期

关键词：

graphene; spin injection; spin current; non-local; room temperature;

D O I：

10.1143/JJAP.46.L605

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate spin injection into a graphene thin film with high reliability by using non-local magnetoresi stance (MR) measurements, in which the electric current path is completely separated from the spin current path. Using these non-local measurements, an obvious MR effect was observed at room temperature; the MR effect was ascribed to magnetization reversal of ferromagnetic electrodes. This result is a direct demonstration of spin injection into a graphene thin film. Furthermore, this is the first report of spin injection into molecules at room temperature.

引用

页码：L605 / L607

页数：3

共 50 条

[41] A possible origin of room temperature ferromagnetism in Indium-Tin oxide thin film: Surface spin polarization and ferromagnetism
Xia, Bin
Wu, Yu
Ho, Hui Wen
Ke, Chang
Song, Wen Dong
Huan, Cheng Hon Alfred
Kuo, Jer Lai
Zhu, Wei Guang
Wang, Lan
PHYSICA B-CONDENSED MATTER, 2011, 406 (17) : 3166 - 3169
[42] CVD Bilayer Graphene Spin Valves with 26 μm Spin Diffusion Length at Room Temperature
Bisswanger, Timo
Winter, Zachary
Schmidt, Anne
Volmer, Frank
Watanabe, Kenji
Taniguchi, Takashi
Stampfer, Christoph
Beschoten, Bernd
NANO LETTERS, 2022, 22 (12) : 4949 - 4955
[43] Enhanced spin accumulation at room temperature in graphene spin valves with amorphous carbon interfacial layers
Neumann, I.
Costache, M. V.
Bridoux, G.
Sierra, J. F.
Valenzuela, S. O.
APPLIED PHYSICS LETTERS, 2013, 103 (11)
[44] Cation-driven electron transfer involving a spin transition at room temperature in a cobalt iron cyanide thin film
Sato, O
Einaga, Y
Iyoda, T
Fujishima, A
Hashimoto, K
JOURNAL OF PHYSICAL CHEMISTRY B, 1997, 101 (20): : 3903 - 3905
[45] Room temperature ferromagnetism in BiFe1-xMnxO3 thin film induced by spin-structure manipulation
Shigematsu, Kei
Asakura, Takeshi
Yamamoto, Hajime
Shimizu, Keisuke
Katsumata, Marin
Shimizu, Haruki
Sakai, Yuki
Hojo, Hajime
Mibu, Ko
Azuma, Masaki
APPLIED PHYSICS LETTERS, 2018, 112 (19)
[46] Room temperature spin-polarization of EuS by thin ferromagnetic multilayers
Goschew, A.
Poulopoulos, P.
Kapaklis, V.
Wilhelm, F.
Rogalev, A.
Fumagalli, P.
2015 IEEE MAGNETICS CONFERENCE (INTERMAG), 2015,
[47] Transparent SiNx thin-film anode for thin-film batteries by reactive sputtering at room temperature
Lee, HyunSeok
Kim, Kwang-Bum
Choi, Ji-Won
CHEMICAL ENGINEERING JOURNAL, 2020, 401
[48] Room-temperature flexible thin film transistor with high mobility
Hsu, Hsiao-Hsuan
Chang, Chun-Yen
Cheng, Chun-Hu
CURRENT APPLIED PHYSICS, 2013, 13 (07) : 1459 - 1462
[49] Ion beam deposition of tantalum pentoxide thin film at room temperature
Kulisch, W.
Gilliland, D.
Ceccone, G.
Rauscher, H.
Sirghi, L.
Colpo, P.
Rossi, F.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2008, 26 (04): : 991 - 995
[50] All-Aluminum Thin Film Transistor Fabrication at Room Temperature
Yao, Rihui
Zheng, Zeke
Zeng, Yong
Liu, Xianzhe
Ning, Honglong
Hu, Shiben
Tao, Ruiqiang
Chen, Jianqiu
Cai, Wei
Xu, Miao
Wang, Lei
Lan, Linfeng
Peng, Junbiao
MATERIALS, 2017, 10 (03):

← 1 2 3 4 5 →