Self assembled quantum dot mid-infrared Si/Ge photodetector fabricated by pulsed laser deposition

被引：0
|
作者：
Hegazy, Mohammed S. [1 ]
Refaat, Tamer F. [1 ]
Elsayed-Ali, Hani E. [1 ]
机构：
[1] Old Dominion Univ, Appl Res Ctr, Newport News, VA 23606 USA
来源：
PROCEEDINGS OF THE WSEAS INTERNATIONAL CONFERENCE ON CIRCUITS, SYSTEMS, ELECTRONICS, CONTROL & SIGNAL PROCESSING: SELECTED TOPICS ON CIRCUITS, SYSTEMS, ELECTRONICS, CONTROL & SIGNAL PROCESSING | 2007年
关键词：
quantum dots; Si/Ge; infrared detectors; optoelectronic devices;
D O I：
暂无
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
A Multilayered mid-infrared Si/Ge quantum-dot photodetector is fabricated by pulsed laser deposition. Forty successive Ge quantum dot layers, each covered with a thin Si layer, are deposited. Deposition was monitored by in situ reflection-high energy electron diffraction. The size distribution of the quantum dots was characterized by ex situ atomic force microscopy. I-V measurements reveal typical diode characteristics, while responsivity measurements show an absorption peak around 2 mu m wavelength. Noise variation with applied voltage and corresponding detectivity were also measured.
引用
收藏
页码：57 / 61
页数：5
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