Mossbauer-effect study of off-center atoms in IV-VI semiconductors

被引：0
|
作者：
Bland, J
Thomas, MF
Virchenko, VA
Kuz'min, VS
Tkachenko, TM
机构：
[1] Univ Liverpool, Dept Phys, Oliver Lodge Lab, Liverpool 69 7ZE, Merseyside, England
[2] Belarussian Acad Sci, Inst Solid State & Semicond Phys, Minsk 220072, BELARUS
来源：
SEMICONDUCTORS | 2001年 / 35卷 / 01期
关键词：
D O I：
10.1134/1.1340283
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
PbTeSnSe and GeSnTe compound semiconductors were studied by Sn-119 Mossbauer spectroscopy in the temperature range from 5 to 240 K. Analysis of temperature dependences of the quadrupole splitting of Mossbauer spectra measured during a cooling-heating cycle confirmed the presence of off-center atoms in these materials. (C) 2001 MAIK "Nauka/Interperiodica".
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页码：14 / 19
页数：6
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