How can we improve sub 40nm Transistor properties by using Ion implantation

被引：0

作者：

Lee, Anbae ^{[1
]}

Jin, Seungwoo

Joo, Younghwan

Jang, Ilsik

Cha, Jaechun

Jeong, Kichel

Kang, Hyosang

Cho, Cjay ^{[2
]}

Jang, Jeonghoon

Hwang, Sunny

机构：

[1] Hynix Semicond Inc, San 136-1 Ami Ri Bubal Eub, Icheon Si, Gyeunggi Do, South Korea

[2] Varian Korea Ltd, Gyeonggi, South Korea

来源：

ION IMPLANTATION TECHNOLOGY 2010 | 2010年 / 1321卷

关键词：

Cold Implantation; 3C Implant (Cold Carbon Cocktail); TRANSIENT ENHANCED DIFFUSION; SILICON; END; EVOLUTION; DEFECTS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To extend current process, it is required develop new implantation method. One of promising candidates are carbon implant, cold implant, or cold carbon implantation. To improve transistor properties, we have evaluated those implantation methods in Lightly doped drain (LDD), Source/Drain(S/D,P+ BF2, N+ As) and N+ add implant step. Carbon (C+) implantation could improve Short channel effect(SCE), cold implantation decrease Drain induced barrier lowering(DIBL), Sense and amplifer(S/A) mismatch and contact resistance. Cold carbon implant improved junction Breakdown voltage(BV). Optimization of process conditions and junction profiles is required for optimum device performance.

引用

页码：37 / +

页数：2