Fermi-edge singularity in luminescence spectra of p-type modulation doped AlGaAs/GaAs quantum wells

被引：0
|
作者：
Bugajski, M
Godlewski, M
Reginski, K
Holtz, PO
Bergman, JP
Monemar, B
机构：
[1] Inst Electron Technol, PL-02668 Warsaw, Poland
[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[3] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden
来源：
ACTA PHYSICA POLONICA A | 1998年 / 94卷 / 02期
关键词：
D O I：
10.12693/APhysPolA.94.265
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have studied an enhancement of the oscillator strength for optical transitions near the Fermi energy in p-type modulation-doped quantum wells, which, so far, deserved much less attention than analogous n-type systems, because of the complicated valence band structure involved. The relatively wide (L = 150 Angstrom) quantum wells and high doping levels were used, containing more than one occupied subband. The enhancement in the photoluminescence intensity at the Fermi energy resulted from the strong correlation and multiple scattering of holes near the Fermi edge by the localized electrons. PACS numbers: 42.55.Pr, 73.20.Dr.
引用
收藏
页码：265 / 270
页数：6
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